| PART |
Description |
Maker |
| HYS72T1G042ER-5-B |
240-Pin Dual Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T512022EP-3S-B |
240-Pin Dual Die Registered DDR2 SDRAM Modules 512M X 72 DDRAM MOD, 0.5 ns, DMA240
|
Qimonda AG
|
| HYS72T128020HR-3.7-B HYS72T128000HR-5-B HYS72T1280 |
240-Pin Registered DDR2 SDRAM Modules
|
Infineon Technologies Corporation
|
| HYB18T1G400BF |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64000HP-3-B HYS72T64000HP-3.7-B HYS72T64000H |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T128000HR-3.7-B HYS72T128000HR-3S-B HYS72T128 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64001HP |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T128000HP2.5-B HYS72T128020HP25F-B HYS72T2562 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T128020HR-3-A |
240-Pin Registered DDR2 SDRAM Modules 128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
|
Infineon Technologies AG
|
| M393T6553BZ3-CD5_CC M393T2950BG0-CD5_CC M393T2950B |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| 70287-1015 0702871015 |
2.54mm (.100) Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
